All-epitaxial, laterally structured plasmonic materials

Optoelectronic devices in the mid-infrared have attracted significant interest due to numerous potential applications communications and sensing. Molecular beam epitaxial (MBE) growth of highly doped InAs has emerged as a promising “designer metal” platform for plasmonic enhancement devices. However, while typical materials can be patterned engineer strong localized resonances, lack lateral control conventional MBE makes it challenging create similar structures compatible with monolithically grown InAs. To this end, we report ridges resonant mid-IR emitters absorbers. Furthermore, demonstrate method regaining planar surface above corrugations, creating pathway epitaxially integrate these into active that leverage fabrication techniques.